Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Turn Off Delay Time  

97 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

160A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Power Dissipation (Max)  

300W Tc

Published  

2010

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

4.5MOhm

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Voltage - Rated DC  

75V

Current Rating  

75A

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

330W

Case Connection  

DRAIN

Turn On Delay Time  

19 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

4.5m Ω @ 75A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

7500pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

270nC @ 10V

Rise Time  

140ns

Vgs (Max)  

±20V

Fall Time (Typ)  

100 ns

Continuous Drain Current (ID)  

75A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

75V

Pulsed Drain Current-Max (IDM)  

680A

Dual Supply Voltage  

75V

Avalanche Energy Rating (Eas)  

690 mJ

Nominal Vgs  

4 V

Height  

9.017mm

Length  

10.668mm

Width  

4.826mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free